Development Engineer (d/m/f) Epitaxy of Nitride based LEDs
Regensburg, Bavaria, Germany – ams-OSRAM International GmbH Regensburg
What we expect
- Development of GaN-based novel epitaxy structures and growth processes using MOCVD targeting opto-electronic applications
- Design, execution, and analysis of epitaxy experiments to enable continuous improvement based on various characterization techniques (e.g., PL, microscopy, SEM, XRD, AFM, SIMS, etc.)
- Extensive collaboration with interdisciplinary teams of experts in epitaxy, modelling, analytics, and FE processing
Who we are looking for
- Academic master's degree in physics, chemistry, material science or similar (preferably with PhD)
- Relevant experience in area of III-V epitaxy preferably in the (In)(Al)GaN material system on a level of (senior) key experts and/or (senior) project managers
- Sound competence in epitaxial processes and hardware with deep dive in device performance and characterization methods of cutting-edge (opto-)electronic semiconductor samples and devices
- Knowledge of LED manufacturing and interaction of epitaxial designs with frontend processes
- Passionate team player with innovative problem-solving attitude paired with high level of commitment
- Very good English skills mandatory, German would be a plus
Contact
Christina Beisiegel will be happy to answer any questions you may have.
Phone: +49 (941) 850 1471
E-Mail: christina.beisiegel@ams-osram.com
Application deadline: as long as the job is listed on our career page, we are looking for suitable candidates (all genders welcome). We are looking forward to receiving your application.
Job details
| Posting date: | 2023/03/09 |
|---|---|
| Experience level: | Early Professional (0-3 Years) |
| Type of contract: | Permanent |
| Schedule: | Full-time |
| Remote work: | Not Specified |
| Business unit: | Opto Semiconductors (OS) |
| Organization: | ams-OSRAM International GmbH Regensburg |
| Job field: | Research & Development |
| Job ID: | 14199 |
